MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)

Author

Liu, Wen-Chau ; Cheng, Shiou-Ying ; Chang, Wen-Lung ; Pan, Hsi-jen ; Shie, Yung-Hsin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1998

fDate

11-15 May 1998

Firstpage

655

Lastpage

658

Abstract

A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs/n-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; indium compounds; resonant tunnelling transistors; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; AlInAs-GaInAs; AlInAs/GaInAs short-period-superlattice; MOCVD; negative-differential-resistance; resonant-tunneling transistor; short-period-superlattice resonant-tunneling transistor; very small offset voltage; Chemical vapor deposition; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Organic chemicals; Resonance; Resonant tunneling devices; Superlattices; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712708

Filename

712708