DocumentCode
2839909
Title
An integrated balun for dual-band LC tank VCO in 130nm CMOS/SOI
Author
Geynet, L. ; De Foucauld, E. ; Cartalade, D. ; Jacquemod, G.
Author_Institution
CEA, Grenoble, France
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
79
Lastpage
80
Abstract
The feasibility of a switched LC tank for multi-standards applications has been proved. With our balun structure, the MOSFET (and its noise) is isolated at secondary, therefore Q-factor is less decreased and flicker noise doesn´t contribute to phase noise. This new structure has lower phase noise than classical bulk tank particularly when switched on. Moreover this new switched tank occupies only one inductor area (290μm × 190μm).
Keywords
CMOS integrated circuits; MOSFET; baluns; integrated circuit noise; phase noise; silicon-on-insulator; voltage-controlled oscillators; 130 nm; 190 micron; 290 micron; CMOS integrated circuit; LC tank voltage controlled oscillator; MOSFET; Q-factor; balun structure; dual-band voltage controlled oscillator; inductor area; phase noise; silicon-on-insulator; switched tank; Circuit simulation; Conductivity; Dual band; Frequency; Impedance matching; Inductance; Inductors; Noise figure; Q factor; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563541
Filename
1563541
Link To Document