Title :
Relaxation of strained-SOI substrates by RTA process
Author :
Yamasaki, Kosuke ; Kosemura, Daisuke ; Tanaka, Satoshi ; Ogura, Atsushi ; Chiba, Ichiro ; Shimidzu, Ryosuke
Author_Institution :
Sch. of Sci. & Eng., Meiji Univ., Kanagawa, Japan
Abstract :
Three different type strained-Si substrates, EPI, SGOI and SSOI, were evaluated by newly developed high-resolution UV-Raman spectroscopy. The structure relaxation occurred by RTA at 1050°C. The Raman peak shifted toward larger wavenumber after RTA for SSOI, indicating strain relaxation. The peak shifted toward lower wavenumber in the case of EPI due to the Ge diffusion rather than strain relaxation. The SGOI showed complex characteristics of SSOI and EPI.
Keywords :
Raman spectroscopy; rapid thermal annealing; relaxation; silicon-on-insulator; ultraviolet spectroscopy; 1050 C; EPI; RTA process; SGOI; SSOI; Si; UV-Raman spectroscopy; high-resolution spectroscopy; rapid thermal annealing; strain relaxation; strained-SOI substrates; structure relaxation; Capacitive sensors; Fabrication; Germanium silicon alloys; Insulation; Optical scattering; Raman scattering; Rayleigh scattering; Silicon germanium; Spectroscopy; Substrates;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563546
