DocumentCode
2840024
Title
Lateral and vertical coupling effects in MIGFETs
Author
Eminente, S. ; Na, Kyoung-Il ; Cristoloveanu, S. ; Mathew, L. ; Vandooren, A.
Author_Institution
IMEP, Grenoble, France
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
94
Lastpage
95
Abstract
We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible to separate the coupling between the two lateral channels and the coupling between one lateral channel and the back gate. The lateral coupling effect between the two gates is strong and can be used to tune the threshold voltage of the device whereas the vertical coupling is weaker and depends on the MIGFET size.
Keywords
MOSFET; semiconductor device measurement; MIGFET; double-gate Fin-FET; independent gate contacts; lateral coupling effects; multiindependent gate FET; threshold voltage; vertical coupling effects; Doping; Double-gate FETs; Fabrication; FinFETs; Intrusion detection; Leakage current; Performance evaluation; Silicon; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563548
Filename
1563548
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