Title :
Lateral and vertical coupling effects in MIGFETs
Author :
Eminente, S. ; Na, Kyoung-Il ; Cristoloveanu, S. ; Mathew, L. ; Vandooren, A.
Author_Institution :
IMEP, Grenoble, France
Abstract :
We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible to separate the coupling between the two lateral channels and the coupling between one lateral channel and the back gate. The lateral coupling effect between the two gates is strong and can be used to tune the threshold voltage of the device whereas the vertical coupling is weaker and depends on the MIGFET size.
Keywords :
MOSFET; semiconductor device measurement; MIGFET; double-gate Fin-FET; independent gate contacts; lateral coupling effects; multiindependent gate FET; threshold voltage; vertical coupling effects; Doping; Double-gate FETs; Fabrication; FinFETs; Intrusion detection; Leakage current; Performance evaluation; Silicon; Substrates; Threshold voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563548
