Title :
Fabrication of self-aligned drain and source on insulator MOSFET with dielectric pocket by local SIMOX technology
Author :
Lv, Zhichao ; Zhang, Hao ; Wang, Jian ; Tian, Lilin ; Li, Zhijian ; Sun, Jiaying ; Chen, Jing ; Wang, Xi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this work, a method to fabricate SA-DSOI MOSFET with dielectric pocket has been presented. Dielectric pocket and BOX are realized by local SIMOX technology. This novel structure results in good SCE and SHE suppression and higher speed performance, which is very important in nanoscale device design. With this novel self-aligned process, DSOI MOSFET can be scaled down to nano-scale and becomes a promising device.
Keywords :
MOSFET; SIMOX; buried layers; dielectric materials; semiconductor device manufacture; SA-DSOI MOSFET; SCE suppression; SHE suppression; buried oxide; dielectric pocket; drain and source on insulator; local SIMOX technology; nanoscale device design; self-aligned process; Annealing; CMOS technology; Dielectrics and electrical insulation; Doping; Fabrication; Laboratories; Leakage current; MOSFET circuits; Microelectronics; Oxidation;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563550
