Vth control of tpd-degradation-free FD SOI MOSFET with extremely thin BOX using variable body-factor scheme

A new bias scheme of variable-γ FD SOI MOSFET is proposed. Using the scheme, almost no degradation of t_pd in the active-state is achieved even in the t_BOX of a sub-10 nm while I_off is sufficiently suppressed in the standby-state. Reducing the inter-die V_th fluctuation on a wide V_sub range in the active-state is realized. This device scheme is also well applicable to 3D channel MOSFETs including a FinFET.