Title :
1998 GaAs Reliability Workshop. Proceedings (Cat. No.98EX219)
Abstract :
The following topics were dealt with: qualification methodologies; reliability testing and failure mechanisms; measurement techniques and device simulation; hydrogen and other outgassing effects
Keywords :
III-V semiconductors; gallium arsenide; semiconductor device reliability; GaAs; GaAs reliability; device simulation; failure mechanisms; hydrogen outgassing; measurement techniques; qualification methodologies; reliability testing;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768027
