Title :
Scaling of GeOI NFET in sub-50nm regime using a Monte-Carlo method
Author :
Barraud, S. ; Clavelier, L.
Author_Institution :
CEA-DRT/LETI, Grenoble, France
Abstract :
Electrical properties in germanium and performances of GeOI devices have been studied using MC simulations. We have shown an ion improvement increasing when the channel length is shrinked that is not the case in strained-Si based NFET. The results clearly demonstrate that the germanium may be a promising material for the future CMOS technology.
Keywords :
MOSFET; Monte Carlo methods; electric properties; elemental semiconductors; germanium; CMOS technology; Ge; GeOI NFET; MC simulations; Monte-Carlo method; channel length; electrical properties; germanium on insulator; Ballistic transport; CMOS technology; Conductivity; Electrons; Fabrication; Germanium; High-K gate dielectrics; Lattices; MOSFETs; Temperature;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563554
