DocumentCode
2840146
Title
A new dose rate model for SOI MOSFETs and its implementation in SPICE
Author
Liu, H.Y. ; Golke, K.W. ; Liu, S.T.
Author_Institution
Honeywell Defense & Space Electron. Syst., Plymouth, MN, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
112
Lastpage
113
Abstract
A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An implementation method for circuit level simulation is described. The validity of this model has been verified by test results.
Keywords
MOSFET; SPICE; semiconductor device models; semiconductor junctions; silicon-on-insulator; SOI MOSFET; SPICE; circuit level simulation; dose rate model; drain-body junctions; excess carriers; silicon-on-insulator; source-body junctions; Bipolar transistors; Charge carrier processes; Circuits; Diodes; Equations; MOS devices; MOSFETs; P-n junctions; Photoconductivity; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563556
Filename
1563556
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