Effects of drain current kinks and negative gate resistances on the performance of HFET MMIC power amplifiers

Author

Wei, Ce-Jun ; Hwang, James C M

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

fYear

1998

fDate

1998

Firstpage

36

Lastpage

39

Abstract

Using novel characterization techniques, frequency-sensitive gain/phase discontinuities of multi-stage MMIC power amplifiers were correlated with HFET drain current kinks and negative gate resistances. The correlation was explained in terms of hole-trapping and self-biasing mechanisms. A remedy involving bias-stabilization diodes was experimentally verified. Other possible remedies are also discussed

Keywords

III-V semiconductors; MMIC power amplifiers; circuit stability; field effect MMIC; gallium arsenide; hole traps; integrated circuit modelling; negative resistance; 8.3 GHz; GaAs HFET MMIC power amplifiers; GaAs-AlGaAs; bias-stabilization diodes; characterization techniques; drain current kinks; frequency-sensitive gain/phase discontinuities; hole-trapping; multi-stage MMIC power amplifiers; negative gate resistances; physical models; pulsed I-V characteristics; self-biasing mechanisms; Avalanche breakdown; Electronic mail; Frequency; Gallium arsenide; HEMTs; MMICs; MODFETs; Performance gain; Power amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1998. Proceedings

Conference_Location

Atlanta, GA

Print_ISBN

0-7908-0065-9

Type

conf

DOI

10.1109/GAASRW.1998.768033

Filename

768033