Title :
Sense amp design in SOI
Author :
Golden, M. ; Tran, J. ; McGee, B. ; Kuo, B.
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
Microprocessors require cutting edge technology to deliver competitive performance. AMD manufactures microprocessors in a 90nm, triple-Vt, SOI process. In this process, static transistor mismatch, caused by process variation, and dynamic transistor mismatch, caused by SOI effects, combine to increase the input referred offset of sense amplifier circuits used in SRAMs. A silicon experiment comparing different sense amp topologies reveals that body-tied transistors provide significant improvement in input referred offset without performance degradation.
Keywords :
SRAM chips; amplifiers; integrated circuit design; microprocessor chips; silicon-on-insulator; 90 nm; CMOS; SOI effects; SRAM; VLSI; body-tied transistors; dynamic transistor mismatch; input referred offset; process variation; sense amplifier circuits; static transistor mismatch; Circuit testing; Circuit topology; Frequency response; MOS devices; Manufacturing processes; Microprocessors; Random access memory; Silicon on insulator technology; Threshold voltage; Transistors; CMOS; SOI; SRAM; Sense amplifier; VLSI;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563559
