Layer-transfer process modifications for fabricating hybrid crystal orientation engineered substrates

Author

Sullivan, Jim ; Kirk, Harry R. ; Kang, Sien ; Ong, Philip J. ; Henley, Francois J.

Author_Institution

Silicon Genesis Corp., San Jose, CA, USA

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

121

Lastpage

122

Abstract

Successful integration of hybrid-orientation substrates into high-volume production requires a layer-transfer process to prepare the substrates. Modifications of SiGen´s NanoCleave™ layer-transfer process were tested for compatibility to cleave and smooth [110] films, produce multi-stack composites and prepare direct bonded film structures. The technology has the promise to be a viable manufacturing process for strained and unstrained hybrid-orientation substrates used for deep submicron mobility enhancement.

Keywords

carrier mobility; crystal orientation; manufacturing processes; nanotechnology; substrates; wafer bonding; cleave films; deep submicron mobility enhancement; direct bonded film structures; hybrid crystal orientation engineered substrates; layer-transfer process modifications; manufacturing process; multistack composites; smooth films; strained hybrid-orientation substrates; unstrained hybrid-orientation substrates; Bonding; Kirk field collapse effect; Laminates; MOS devices; Semiconductor films; Silicon; Smoothing methods; Space technology; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563560

Filename

1563560