DocumentCode
2840217
Title
Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate for SoC applications
Author
Sun, I. S M ; Ng, W.T. ; Mochizuki, H. ; Kanekiyo, K. ; Kobayashi, T. ; Toita, M. ; Imai, H. ; Ishikawa, A. ; Tamura, S. ; Takasuka, K.
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
123
Lastpage
125
Abstract
This work presents an ultra-low power RF LBJT on SOI. The Johnson´s product (fτ ×BVCEO) of the fabricated LBJTs ranges between 190-300 GHz-V. The fmax of the optimal device reaches 46 GHz at collector current density of only 0.15mA/μm2. This LBJT is compatible with SOI-CMOS for SOI-BiCMOS integration, an ideal technology for RF and mixed-signal SoC.
Keywords
BiCMOS integrated circuits; low-power electronics; millimetre wave bipolar transistors; silicon-on-insulator; substrates; system-on-chip; 46 GHz; Johnson product; RF system-on-chip; SOI-BiCMOS integration; SOI-CMOS compatible substrate; lateral RF bipolar junction transistor; mixed-signal system-on-chip; ultra-low power RF bipolar junction transistor; CMOS process; CMOS technology; Current density; Electric breakdown; Fabrication; Isolation technology; Mercury (metals); Radio frequency; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563561
Filename
1563561
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