Title :
The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers
Author :
Joshi, Vikram ; Ohno, Morifumo ; Ida, Jiro ; Nagatomo, Yoshiki ; Strauss, Karl
Author_Institution :
Symetrix Semicond. Corp., Palo Alto, CA, USA
Abstract :
We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
Keywords :
bismuth compounds; ferroelectric capacitors; silicon-on-insulator; strontium compounds; tantalum compounds; FD-SOI transistors; SOI substrate; SrBi2Ta2O9-Si; ferroelectric capacitors; strontium-bismuth-tantalate capacitors; Capacitors; Ferroelectric materials; Ionizing radiation; Laboratories; NASA; Nonvolatile memory; Propulsion; Strontium; Substrates; Testing;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563563
