DocumentCode
2840269
Title
200mm germanium-on-insulator (GeOI) by Smart Cut™ technology and recent GeOI pMOSFETs achievements
Author
Akatsu, T. ; Deguet, C. ; Sanchez, L. ; Richtarch, C. ; Allibert, F. ; Letertre, F. ; Mazure, C. ; Kernevez, N. ; Clavelier, L. ; Le Royer, C. ; Hartmann, J.-M. ; Loup, V. ; Meuris, M. ; De Jaeger, B. ; Raskin, G.
Author_Institution
Soitec S.A., Parc Technologiques des Fontaines, Bernin, France
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
137
Lastpage
138
Abstract
We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting device characteristics. Pseudo-MOS measurements were done at Soitec, and Ge MOSFET fabrication was done at LETI and IMEC from epitaxial and bulk Ge starting materials, respectively.
Keywords
MOSFET; elemental semiconductors; germanium; semiconductor device measurement; 200 mm; Ge; Ge MOSFET fabrication; Smart Cut technology; device characteristics; germanium-on-insulator; pMOSFETs achievements; pseudo-MOS measurements; Dielectrics; Electrical resistance measurement; Hafnium oxide; Kelvin; MOSFET circuits; Passivation; Plasma temperature; Surface treatment; Tin; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563565
Filename
1563565
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