A novel technique to calculate the critical temperature of thermal agglomerations on patterned SOI wafers

Author

Widodo, Lisa ; Pham, Daniel ; Sassman, Barry ; Larson, Larry

Author_Institution

SEMATECH, Austin, TX, USA

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

139

Lastpage

140

Abstract

Thermal agglomeration of ultra-thin SOI (<20nm) is an undesirable issue for device fabrication. In this article for the first time, a methodology to calculate the critical temperature and agglomeration rate on patterned SOI wafers with different thicknesses, ranging from 5.9nm to 12.1nm has been established. This study also presents the agglomeration effect on patterned SOI wafers for silicon structure shape, undoped, n-type doped, and p-type doped. The developed method has been tested and compared in context of previous papers published on non-patterned films presented in Y. Ishikawa et al. (2002). In addition, detailed analysis on various surface morphologies at different temperatures has been included.

Keywords

critical phenomena; nanotechnology; silicon-on-insulator; surface morphology; 5.9 to 12.1 nm; agglomeration effect; critical temperature; device fabrication; n-type doped structure; nonpatterned films; p-type doped structure; patterned SOI wafers; structure shape; surface morphology; thermal agglomerations; ultra-thin silicon-on-insulator; undoped structure; Capacitors; Fabrication; Hydrogen; Optical films; Optical microscopy; Scanning electron microscopy; Shape; Silicon; Surface morphology; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563566

Filename

1563566