Title :
A hybrid FinFET/SOI MOSFET
Author :
Zhang, Wensheng ; Fossum, Jerry G. ; Mathew, Lini
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
In this paper, process/physics-based generic compact model for DG MOSFETs, UFDG (Fossum, 2004), in Spice3, combined with simulations done with the 3D numerical simulator Davinci (2003), to gain insights regarding the design and performance of this hybrid device, which we call the inverted-T FET (ITFET) because of its cross-sectional shape we used. Based on UFDG/Spice3 simulations, we also note the potential benefit of the ITFET in effecting a good design of the FinFET-CMOS 6T-SRAM cell with regard to the area-performance tradeoff.
Keywords :
CMOS memory circuits; MOSFET; SPICE; SRAM chips; semiconductor device models; silicon-on-insulator; 3D numerical simulator; CMOS 6T-SRAM cell; DG MOSFET; FinFET; SOI MOSFET; UFDG/Spice3 simulations; generic compact model; hybrid device; inverted-T FET; CMOS technology; FETs; FinFETs; High K dielectric materials; High-K gate dielectrics; Instruments; MOSFET circuits; Microelectronics; Semiconductor device noise; Tunneling;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563570
