Dielectric breakdown, defects and reliability in SiN MIMCAPs

Author

Scarpulla, John ; Ahlers, Eve D. ; Eng, David C. ; Leung, Denise L. ; Olson, Scott R. ; Wu, Chan-Shin

Author_Institution

TRW RF Products Center, Redondo Beach, CA, USA

fYear

1998

fDate

1998

Firstpage

92

Lastpage

105

Abstract

The reliability of GaAs MIMCAPs is studied. The MIMCAPs have a low temperature PECVD nitride, Au metal electrodes and Ti adhesion layers. By examining the conduction properties of the SiN dielectric in these capacitors, a model is proposed to predict breakdown. A ramped voltage method is used to determine the extrinsic defect densities. The method for calculating failure rates from this model is shown, and voltage and temperature accelerated testing factors are derived

Keywords

MIM devices; MMIC; defect states; electric breakdown; failure analysis; integrated circuit reliability; life testing; silicon compounds; thin film capacitors; Au metal electrodes; GaAs; GaAs MMIC technology; SiN MIM capacitors; SiN MIMCAPs; SiN dielectric; Ti adhesion layers; Ti-Au-SiN-GaAs; conduction properties; defects; dielectric breakdown; extrinsic defect densities; failure rates; low temperature PECVD nitride; model; ramped voltage method; reliability; temperature accelerated testing factors; voltage accelerated testing factors; Adhesives; Capacitors; Dielectric breakdown; Electrodes; Gallium arsenide; Gold; Predictive models; Silicon compounds; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1998. Proceedings

Conference_Location

Atlanta, GA

Print_ISBN

0-7908-0065-9

Type

conf

DOI

10.1109/GAASRW.1998.768043

Filename

768043