• DocumentCode
    2840357
  • Title

    An integratable dual metal gate/high-k CMOS solution for FD-SOI and MuGFET technologies

  • Author

    Zhang, Z.B. ; Song, S.C. ; Choi, K. ; Sim, J.H. ; Majhi, P. ; Lee, B.H.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    This paper describes a simple process that can tune the work function of ALD TaCN gate electrode on HfO2 from 4.47eV to 4.77eV by adding a CVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating dual metal gate/high-k CMOS in a FD-FET technology.
  • Keywords
    CMOS integrated circuits; MOSFET; atomic layer deposition; carbon compounds; chemical vapour deposition; dielectric materials; electrodes; hafnium compounds; silicon-on-insulator; tantalum compounds; titanium compounds; work function; 4.47 to 4.77 eV; FD-FET technology; FD-SOI technology; HfO2; MOSFET; MuGFET technology; TiN-TaCN; atomic layer deposition; chemical vapor deposition; dual metal gate CMOS; gate electrode; high-k CMOS; work function; CMOS process; CMOS technology; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; MOSFET circuits; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563572
  • Filename
    1563572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840357