Title :
An integratable dual metal gate/high-k CMOS solution for FD-SOI and MuGFET technologies
Author :
Zhang, Z.B. ; Song, S.C. ; Choi, K. ; Sim, J.H. ; Majhi, P. ; Lee, B.H.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
This paper describes a simple process that can tune the work function of ALD TaCN gate electrode on HfO2 from 4.47eV to 4.77eV by adding a CVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating dual metal gate/high-k CMOS in a FD-FET technology.
Keywords :
CMOS integrated circuits; MOSFET; atomic layer deposition; carbon compounds; chemical vapour deposition; dielectric materials; electrodes; hafnium compounds; silicon-on-insulator; tantalum compounds; titanium compounds; work function; 4.47 to 4.77 eV; FD-FET technology; FD-SOI technology; HfO2; MOSFET; MuGFET technology; TiN-TaCN; atomic layer deposition; chemical vapor deposition; dual metal gate CMOS; gate electrode; high-k CMOS; work function; CMOS process; CMOS technology; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; MOSFET circuits; Tin;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563572
