Title :
Surface vs. bulk noise in SOI four-gate transistors
Author :
Akarvardar, K. ; Dufrene, B. ; Cristoloveanu, S. ; Chroboczek, J.A. ; Gentil, P. ; Blalock, B.J. ; Mojarradi, M.
Author_Institution :
IMEP, Grenoble, France
Abstract :
Low-frequency noise characteristics of four-gate transistors (G4-FETs) are presented distinguishing the surface conduction (MOSFET mode) and volume conduction (JFET mode). As the conducting channel moves from the surface to the bulk we observe that: (i) the noise level dramatically decreases; and (ii) the nature of the noise changes. The validity of the existing noise models for different conduction modes is discussed.
Keywords :
MOSFET; junction gate field effect transistors; semiconductor device models; semiconductor device noise; JFET mode; MOSFET mode; SOI four-gate transistors; bulk noise; channel conduction; conduction modes; noise models; surface conduction; surface noise; volume conduction; Fluctuations; Frequency; Laboratories; Low-frequency noise; MOSFET circuits; Microelectronics; Noise level; Noise reduction; Propulsion; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563574
