• DocumentCode
    2840373
  • Title

    Surface vs. bulk noise in SOI four-gate transistors

  • Author

    Akarvardar, K. ; Dufrene, B. ; Cristoloveanu, S. ; Chroboczek, J.A. ; Gentil, P. ; Blalock, B.J. ; Mojarradi, M.

  • Author_Institution
    IMEP, Grenoble, France
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    161
  • Lastpage
    162
  • Abstract
    Low-frequency noise characteristics of four-gate transistors (G4-FETs) are presented distinguishing the surface conduction (MOSFET mode) and volume conduction (JFET mode). As the conducting channel moves from the surface to the bulk we observe that: (i) the noise level dramatically decreases; and (ii) the nature of the noise changes. The validity of the existing noise models for different conduction modes is discussed.
  • Keywords
    MOSFET; junction gate field effect transistors; semiconductor device models; semiconductor device noise; JFET mode; MOSFET mode; SOI four-gate transistors; bulk noise; channel conduction; conduction modes; noise models; surface conduction; surface noise; volume conduction; Fluctuations; Frequency; Laboratories; Low-frequency noise; MOSFET circuits; Microelectronics; Noise level; Noise reduction; Propulsion; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563574
  • Filename
    1563574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840373