• DocumentCode
    2840438
  • Title

    A proposal for improving cutoff-frequency breakdown-voltage products of HEMTs

  • Author

    Tsukurimichi, Hirokazu ; Hashimoto, Shoushin ; Iiyama, Kouichi ; Takamiya, Saburo

  • Author_Institution
    Fac. of Eng., Kanazawa Univ., Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    663
  • Lastpage
    666
  • Abstract
    The breakdown-voltage cutoff-frequency product gives a figure of merit of FETs/HEMTs. This paper studies it from a view point of energy-bandgaps of channel materials, and proposes a bandgap engineered device for improving the product. VB·fT of an InGaAs HEMT can be doubled by introducing a (InGaAs to InP) graded composition zone
  • Keywords
    III-V semiconductors; energy gap; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InGaAs-InP; bandgap engineered device; channel materials; energy-bandgaps; figure of merit; graded composition zone; improving cutoff-frequency breakdown-voltage products; Degradation; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Photonic band gap; Power engineering and energy; Proposals; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712723
  • Filename
    712723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840438