Title :
Undoped thin film FD-SOI CMOS with source/drain-to-gate non-overlapped structure for ultra low leak applications
Author :
Miura, Noriyuki ; Domae, Yasuhiro ; Sakata, Toyokazu ; Watanabe, Minoru ; Okamura, Tomohiro ; Chiba, Tadashi ; Fukuda, Koichi ; Ida, Jiro
Author_Institution :
Semicond. R&D Div., Oki Electr. Ind. Co., Ltd., Tokyo, Japan
Abstract :
In this paper, we present an undoped thin film fully-depleted (FD) silicon-on-insulator (SOI) CMOS with source/drain-to-gate non-overlapped structure for ultra low leak (ULL) transistor. The fabricated device achieved a cutoff frequency fT of 65GHz with Ioff< 0.1pA/μm (GIDL-free). The proposed inverted-gate implantation/planar-type SOI is practical and low-cost solution for coin-battery applications.
Keywords :
MOSFET; inversion layers; silicon-on-insulator; 65 GHz; coin-battery application; fully-depleted silicon-on-insulator CMOS; inverted-gate implantation; planar type SOI; source/drain-to-gate nonoverlapped structure; ultra low leak transistor; undoped thin film silicon-on-insulator CMOS; Counting circuits; Cutoff frequency; Immune system; Leakage current; MOSFETs; Research and development; Semiconductor thin films; Silicon on insulator technology; Thin film transistors; Toy industry;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563579
