• DocumentCode
    2840533
  • Title

    Impact of BOX scaling on 30 nm gate length FD SOI MOSFET

  • Author

    Fujiwara, M. ; Morooka, T. ; Yasutake, N. ; Ohuchi, K. ; Aoki, N. ; Tanimoto, H. ; Kondo, M. ; Miyano, K. ; Inaba, S. ; Ishimaru, K. ; Ishiuchi, H.

  • Author_Institution
    SoC R&D Center, Toshiba Corp. Semicond. Co., Kanagawa, Japan
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    180
  • Lastpage
    182
  • Abstract
    This paper presents the first demonstration of ultra-thin BOX FD SOI devices with nominal gate length of 30 nm. The characteristics of FD SOI MOSFETs are investigated in detail as TBOX is varied from 5 nm to 145 nm. In addition, optimum design regions of TBOX for achieving performance requirements are demonstrated.
  • Keywords
    MOSFET; nanotechnology; silicon-on-insulator; 30 nm; BOX scaling; FD SOI MOSFET; buried oxide; silicon-on-insulator; ultra-thin BOX FD SOI devices; CMOS process; Doping; Fabrication; MOSFET circuits; Manufacturing processes; Oxidation; Plasma sources; Semiconductor device manufacture; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563581
  • Filename
    1563581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840533