Title :
A novel nonvolatile memory cell for programmable logic
Author :
Lin, H. ; Tiwari, S.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
A novel, simple and bipolar-injection based nonvolatile field-effect memory cell is demonstrated in silicon-on-insulator CMOS technology. Programming time down to 8 ns are achieved together with erase times of a milli-second. The characteristics, compactness and compatibility with CMOS processes suggest suitability of the structure for embedded programmable and reprogrammable applications, and extensible to 3D applications. This extended abstract summarizes the technology and experimental characteristics of the device.
Keywords :
CMOS integrated circuits; field effect memory circuits; programmable logic devices; random-access storage; silicon-on-insulator; CMOS technology; bipolar-injection; field-effect memory cell; nonvolatile memory cell; programmable logic; silicon-on-insulator; CMOS logic circuits; CMOS process; CMOS technology; Charge carrier processes; Logic devices; Logic programming; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563590
