DocumentCode :
2840728
Title :
Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration
Author :
Liu, Y.X. ; Endo, Kazuhiro ; Masahara, M. ; Sugimata, Etsuro ; Matsukawa, T. ; Ishii, Kazuki ; Yamauchi, Hiroyuki ; Shimizu, Tsuyoshi ; Sakamoto, Kazumitsu ; O´uchi, S. ; Sekigawa, Toshihiro ; Suzuki, Einoshin
Author_Institution :
National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fYear :
2005
fDate :
3-6 Oct. 2005
Firstpage :
219
Lastpage :
220
Abstract :
As advanced FinFET technologies, we have developed the co-integration techniques of the TiN gated high-performance 3T- and flexible Vth 4T-FinFETs. By using the conventional reactive sputtering of TiN, the well symmetrical Vth N- and P-channel 3T-FinFETs and the high Vth-controllable 4T-FinFETs using the resist etch-back process have been demonstrated. The developed technologies are attractive to materialize the high-performance and power-managed FinFET CMOS circuits.
Keywords :
CMOS integrated circuits; MOSFET; sputter etching; titanium compounds; 3-terminal FinFET; 4-terminal FinFET; FinFET CMOS circuits; FinFET technology; TiN; co-integration techniques; etch-back process; metal-gate CMOS; reactive sputtering; CMOS technology; FinFETs; High K dielectric materials; High-K gate dielectrics; Instruments; MOSFETs; Metals industry; Microelectronics; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-9212-4
Type :
conf
DOI :
10.1109/SOI.2005.1563594
Filename :
1563594
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2840728
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