• DocumentCode
    2840728
  • Title

    Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

  • Author

    Liu, Y.X. ; Endo, Kazuhiro ; Masahara, M. ; Sugimata, Etsuro ; Matsukawa, T. ; Ishii, Kazuki ; Yamauchi, Hiroyuki ; Shimizu, Tsuyoshi ; Sakamoto, Kazumitsu ; O´uchi, S. ; Sekigawa, Toshihiro ; Suzuki, Einoshin

  • Author_Institution
    National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    219
  • Lastpage
    220
  • Abstract
    As advanced FinFET technologies, we have developed the co-integration techniques of the TiN gated high-performance 3T- and flexible Vth 4T-FinFETs. By using the conventional reactive sputtering of TiN, the well symmetrical Vth N- and P-channel 3T-FinFETs and the high Vth-controllable 4T-FinFETs using the resist etch-back process have been demonstrated. The developed technologies are attractive to materialize the high-performance and power-managed FinFET CMOS circuits.
  • Keywords
    CMOS integrated circuits; MOSFET; sputter etching; titanium compounds; 3-terminal FinFET; 4-terminal FinFET; FinFET CMOS circuits; FinFET technology; TiN; co-integration techniques; etch-back process; metal-gate CMOS; reactive sputtering; CMOS technology; FinFETs; High K dielectric materials; High-K gate dielectrics; Instruments; MOSFETs; Metals industry; Microelectronics; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563594
  • Filename
    1563594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840728