Title :
Fabrication and characterization of InAs/AlGaSb quantum wire transistors
Author :
Maemoto, T. ; Yamamoto, H. ; Konami, M. ; Sasa, S. ; Inoue, M.
Author_Institution :
New Mater. Res. Center, Osaka Inst. of Technol., Japan
Abstract :
Fabrication of InAs/AlGaSb quantum wire transistors (QWTs) and quasi-one-dimensional (1D) transport properties are reported. Low-dimensional electron transport properties were characterized by magneto-transport measurements at 4.2 K. We have succeeded in a decent demonstration of QWTs with narrow channels down to 100 nm width. The transconductance in multiple QWTs with various wire width are compared to discuss 1D electron transport properties
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor quantum wires; thin film transistors; 100 nm; 4.2 K; InAs-AlGaSb; InAs/AlGaSb quantum wire transistors; characterization; fabrication; low-dimensional electron transport properties; quasi-one-dimensional transport properties; transconductance; Atomic force microscopy; Electrons; Etching; Fabrication; Gallium arsenide; Leakage current; Molecular beam epitaxial growth; Resists; Transconductance; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712725
