DocumentCode
2841337
Title
DFB lasers with tapered active stripe for narrow beam divergence
Author
Kito, M. ; Inaba, Y. ; Chino, T. ; Ishino, M. ; Matsui, Y.
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fYear
1998
fDate
22-27 Feb. 1998
Firstpage
377
Lastpage
378
Abstract
Summary form only given. We present a 1.3-/spl mu/m gain-coupled DFB semiconductor laser with a tapered active stripe. The fabricated laser shows narrow beam divergence of 13-14 degrees and high side-mode suppression ratio (SMSR) of >45 dB. The laser has an InAsP absorptive grating, which is buried between the n-InP buffer layer and the corrugated n-InP substrate.
Keywords
diffraction gratings; distributed feedback lasers; infrared sources; laser beams; laser modes; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; InAsP; InAsP absorptive grating; InP; MQW lasers; corrugated n-InP substrate; gain-coupled DFB semiconductor laser; high side-mode suppression ratio; n-InP buffer layer; narrow beam divergence; quantum well lasers; tapered active stripe; Buffer layers; Couplings; Fiber lasers; Gratings; Laboratories; Laser beams; Laser modes; Optical buffering; Optical fiber communication; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exhibit, 1998. OFC '98., Technical Digest
Conference_Location
San Jose, CA, USA
Print_ISBN
1-55752-521-8
Type
conf
DOI
10.1109/OFC.1998.657487
Filename
657487
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