Title :
4-5 ps optical pulse generation with 40 GHz train from low driving-voltage modulator modules
Author :
Wakita, K. ; Yoshino, K. ; Hirano, A. ; Kondo, S. ; Noguchi, Y.
Author_Institution :
Dept. of Electr. Eng., Chubu Univ., Aichi, Japan
Abstract :
Optimization of InGaAs/InAlAs multiple quantum well modulator structures, as well as polarization insensitivity and low chirp was investigated as a function of well thickness and strain magnitude and very short optical pulses with 4-6 ps was obtained using a low driving-voltage (2.0 Vpp) electroabsorption modulator module operating at a 40-GHz large signal modulation
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical pulse generation; quantum well devices; 2.0 V; 4 to 6 ps; 40 GHz; InGaAs-InAlAs; chirp; electroabsorption modulator; large signal modulation; low driving-voltage modulator modules; multiple quantum well modulator; optical pulse generation; polarization insensitivity; strain magnitude; well thickness; Absorption; Bandwidth; Capacitive sensors; Chirp modulation; Optical modulation; Optical pulse generation; Optical pulses; Pulse modulation; Quantum well devices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712730
