4-5 ps optical pulse generation with 40 GHz train from low driving-voltage modulator modules

Author

Wakita, K. ; Yoshino, K. ; Hirano, A. ; Kondo, S. ; Noguchi, Y.

Author_Institution

Dept. of Electr. Eng., Chubu Univ., Aichi, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

679

Lastpage

682

Abstract

Optimization of InGaAs/InAlAs multiple quantum well modulator structures, as well as polarization insensitivity and low chirp was investigated as a function of well thickness and strain magnitude and very short optical pulses with 4-6 ps was obtained using a low driving-voltage (2.0 V_pp) electroabsorption modulator module operating at a 40-GHz large signal modulation

Keywords

III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical pulse generation; quantum well devices; 2.0 V; 4 to 6 ps; 40 GHz; InGaAs-InAlAs; chirp; electroabsorption modulator; large signal modulation; low driving-voltage modulator modules; multiple quantum well modulator; optical pulse generation; polarization insensitivity; strain magnitude; well thickness; Absorption; Bandwidth; Capacitive sensors; Chirp modulation; Optical modulation; Optical pulse generation; Optical pulses; Pulse modulation; Quantum well devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712730

Filename

712730