Title :
Carrier relaxation enhanced by optical confinement in InP/InGaAs phase-shifted distributed Bragg reflector
Author :
Ogawa, K. ; Matsui, Y. ; Itatani, T. ; Ouchi, K.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
Ultrafast carrier dynamics in an InP/InGaAs phase-shifted distributed Bragg reflector is studied by means of transient reflectance measurements. Transient reflectance of the phase-shifted Bragg reflector shows ultrafast relaxation of relaxation time constant of ≈200 fs due to carrier-carrier scattering. Such ultrafast relaxation is not observed in a bulk InGaAs. Carrier-carrier scattering is thus enhanced in the phase-shifted Bragg reflector by optical confinement
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; high-speed optical techniques; indium compounds; nonlinear optics; transients; InP-InGaAs; carrier relaxation; carrier-carrier scattering; optical confinement; phase-shifted distributed Bragg reflector; relaxation time constant; transient reflectance; ultrafast carrier dynamics; Carrier confinement; Distributed Bragg reflectors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical pumping; Optical saturation; Optical scattering; Reflectivity; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712735
