• DocumentCode
    2842171
  • Title

    Annealing effect of niobium pentoxide for low voltage electrowetting on dielectric (EWOD)

  • Author

    Chen, Hsiu-Hsiang ; Fu, C.

  • Author_Institution
    Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    19-21 Oct. 2011
  • Firstpage
    401
  • Lastpage
    403
  • Abstract
    In this paper, the high dielectric constants for Nb2O5 (~25.5) were deposited by a RF reactive magnetron sputtering and respectively annealed at 400 °C O2 ambiance for 30 min in a conventional furnace. Based on the results, an electrowetting optical deflector (EOD) filled with the water (1% sodium dodecyl sulfate (SDS)) and dodecane was fabricated and tested, and the contact angle of the inclined liquid surface on the left and right sidewall can be varied about 70° at 9 V operating voltage. This study provides a practical way to fabricate a high dielectric constant layer for low voltage electrowetting on dielectric (EWOD) application.
  • Keywords
    annealing; niobium compounds; optical deflectors; permittivity; sputtering; EOD; EWOD; RF reactive magnetron sputtering; annealing; dielectric constants; electrowetting on dielectric; electrowetting optical deflector; niobium pentoxide; Annealing; Dielectric constant; Rough surfaces; Surface morphology; Surface roughness; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2011 6th International
  • Conference_Location
    Taipei
  • ISSN
    2150-5934
  • Print_ISBN
    978-1-4577-1387-3
  • Electronic_ISBN
    2150-5934
  • Type

    conf

  • DOI
    10.1109/IMPACT.2011.6117208
  • Filename
    6117208