DocumentCode :
2842171
Title :
Annealing effect of niobium pentoxide for low voltage electrowetting on dielectric (EWOD)
Author :
Chen, Hsiu-Hsiang ; Fu, C.
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2011
fDate :
19-21 Oct. 2011
Firstpage :
401
Lastpage :
403
Abstract :
In this paper, the high dielectric constants for Nb2O5 (~25.5) were deposited by a RF reactive magnetron sputtering and respectively annealed at 400 °C O2 ambiance for 30 min in a conventional furnace. Based on the results, an electrowetting optical deflector (EOD) filled with the water (1% sodium dodecyl sulfate (SDS)) and dodecane was fabricated and tested, and the contact angle of the inclined liquid surface on the left and right sidewall can be varied about 70° at 9 V operating voltage. This study provides a practical way to fabricate a high dielectric constant layer for low voltage electrowetting on dielectric (EWOD) application.
Keywords :
annealing; niobium compounds; optical deflectors; permittivity; sputtering; EOD; EWOD; RF reactive magnetron sputtering; annealing; dielectric constants; electrowetting on dielectric; electrowetting optical deflector; niobium pentoxide; Annealing; Dielectric constant; Rough surfaces; Surface morphology; Surface roughness; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2011 6th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4577-1387-3
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2011.6117208
Filename :
6117208
Link To Document :
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