Title :
High performance buried heterostructure 1.55 μm wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique
Author :
Tanbun-Ek, Tawee ; Chu, S.N.G. ; Wisk, P.W. ; Pawelek, R. ; Sergent, A.M. ; Minch, Jeffrey ; Young, Erik ; Chuang, S.L.
Author_Institution :
Lucent Technol. Inc., Murray Hill, NJ, USA
Abstract :
The fabrication and characterization of a high quality buried heterostructure (BH) type 1.55 μm wavelength strained AlGaInAs/InP MQW laser is reported. The lasers have low threshold current density (600 A/cm2) for compressively strained MQW measured from a BH chip with cavity lengths of 545 μm and 1.5 μm wide. Low threshold current of less than 10 mA (2 mA with HR facets coated) is obtained. The differential modal gain of the AlGaInAs devices was also found to be superior to that of the conventional strained GaInAsP system
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; internal stresses; quantum well lasers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 mum; 1.55 mum; 10 mA; 545 mum; AlGaInAs-InP; AlGaInAs/InP; MOVPE layers; buried heterostructure strained MQW laser; cavity length; characterization; compressive strain; differential modal gain; fabrication; threshold current density; Epitaxial growth; Epitaxial layers; Indium phosphide; Material properties; Optical device fabrication; Photonic band gap; Quantum well devices; Ring lasers; Threshold current; USA Councils;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712736
