Large-signal modeling of microwave GaAs MESFET´s, challenges and solutions

Author

Wei, C.J. ; Tkachenko, Y. ; Bartle, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

fYear

1998

fDate

1998

Firstpage

75

Lastpage

79

Abstract

The current status in GaAs MESFET modeling is briefly reviewed in view of challenges to microwave power amplifier designers due to the complex nature of the device. A compact large-signal dispersive current and charge model for MESFETs along with an extraction tool is presented. The model is self-consistent by introducing a self-heating subcircuit, a high-pass feedback and appropriate charge-characteristics. Extraction of model parameters is performed by using an in-house model extraction software. The new model accurately predicts the DC I-Vs, RF GVs/CVs, bias-dependent S-parameters, power and linearity characteristics of the MESFET. Simulated results of a power amplifier for wireless communications are also presented

Keywords

III-V semiconductors; S-parameters; feedback; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; GaAs; MESFET modeling; bias-dependent S-parameters; charge-characteristics; dispersive charge model; dispersive current model; extraction tool; high-pass feedback; large-signal modeling; linearity characteristics; microwave GaAs MESFET; model extraction software; power characteristics; self-heating subcircuit; Dispersion; Feedback; Gallium arsenide; MESFETs; Microwave amplifiers; Microwave devices; Power amplifiers; Predictive models; Radio frequency; Software performance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768228

Filename

768228