Title :
Large-signal modeling of microwave GaAs MESFET´s, challenges and solutions
Author :
Wei, C.J. ; Tkachenko, Y. ; Bartle, D.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
The current status in GaAs MESFET modeling is briefly reviewed in view of challenges to microwave power amplifier designers due to the complex nature of the device. A compact large-signal dispersive current and charge model for MESFETs along with an extraction tool is presented. The model is self-consistent by introducing a self-heating subcircuit, a high-pass feedback and appropriate charge-characteristics. Extraction of model parameters is performed by using an in-house model extraction software. The new model accurately predicts the DC I-Vs, RF GVs/CVs, bias-dependent S-parameters, power and linearity characteristics of the MESFET. Simulated results of a power amplifier for wireless communications are also presented
Keywords :
III-V semiconductors; S-parameters; feedback; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; GaAs; MESFET modeling; bias-dependent S-parameters; charge-characteristics; dispersive charge model; dispersive current model; extraction tool; high-pass feedback; large-signal modeling; linearity characteristics; microwave GaAs MESFET; model extraction software; power characteristics; self-heating subcircuit; Dispersion; Feedback; Gallium arsenide; MESFETs; Microwave amplifiers; Microwave devices; Power amplifiers; Predictive models; Radio frequency; Software performance;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768228
