Title :
Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures
Author :
Reddy, M.S.P. ; Hee-Sung Kang ; Dong-Seok Kim ; Young-Woo Jo ; Chul-Ho Won ; Ryun-Hwi Kim ; Kyu-Il Jang ; Chandrashekhar, C.H. ; Jung-Hee Lee ; Reddy, V.R.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
The current-voltage (I-V) characteristics of Au/polyvinyl alcohol (PVA)/n-InP Schottky diode have been measured at temperature range 175-425 K. It is found that the series resistance (RS) values of Au/PVA/n-InP Schottky diode estimated from Cheung´s and Norde´s methods, are strongly temperature dependent. The values of barrier height and RS have very different especially towards to the lower temperatures. This is attributed to non-ideal I-V characteristics of the MIS structure and non-pure thermionic emission (TE) mechanism due to the low temperature effects.
Keywords :
MIS structures; Schottky diodes; indium compounds; polymer blends; thermionic emission; Au; Au-PVA-n-InP Schottky diode; Au-polyvinyl alcohol-n-InP Schottky diode; Cheung method; InP; MIS structure; Norde method; RS value; barrier height; current-voltage characteristics; nonideal I-V characteristics; nonpure thermionic emission mechanism; series resistance determination; temperature 147 K to 425 K; temperature effect; Gold; Resistance; Schottky barriers; Schottky diodes; Temperature; Temperature dependence; Temperature measurement; Au/PVA/n-InP Schottky diode; barrier height; ideality factor; series resistance; thermionic emission;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403321
