Title :
Intermodulation cancellation in HEMTs
Author :
Qu, Guoli ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
This paper examines intermodulation (IM) minima generated by the nonlinear drain-source current characteristics of HEMTs. This investigation is based on a more accurate intermodulation distortion model recently proposed by Qu and Parker (see The Proc. of 14th Australian Microelectronics Conference, p. 70-5, Oct. 1997). The IM cancellation conditions in terms of the Taylor series coefficients are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices
Keywords :
high electron mobility transistors; intermodulation distortion; microwave field effect transistors; series (mathematics); HEMTs; IM minima; IMD; Taylor series coefficients; intermodulation cancellation; intermodulation distortion model; nonlinear drain-source current characteristics; optional bias; second-order IM cancellation; third-order IM cancellation; transconductance characteristics; Character generation; Distortion measurement; HEMTs; Intermodulation distortion; MODFETs; Nonlinear distortion; Performance analysis; System performance; Taylor series; Transconductance;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768231
