Title :
Selective gate recess etching of GaInP/InGaAs/GaAs PHEMT using BCl 3+Ar plasma
Author :
Kuo, C.W. ; Su, Y.K. ; Chang, S.J. ; Kuan, H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) were fabricated by BCl3+Ar plasma etching. Photoreflectance (PR) was used to evaluate the quality of the etching surface. It was found that a sample dry-etched with a 6 sccm BCl3 flow rate, a 4 sccm Ar flow rate, and a 100 W RF power (i.e. sample Sa) has the smallest amount of damage. The DC and small signal RF characteristics of PHEMT Sa were superior to those of the wet-etched PHEMT S0 and PHEMT Sb dry etched with pure BCl3. The improvement is attributed to the lower parasitic source resistance associated with the tighter gate recess geometry of the plasma recess device
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; sputter etching; 100 W; 20 GHz; 54 GHz; Ar; BCl3; BCl3-Ar; BCl3/Ar plasma; DC characteristics; GaAs; GaInP-InGaAs-GaAs; PHEMT; RIE system; etching surface quality evaluation; gate recess geometry; high electron mobility transistors; parasitic source resistance; photoreflectance; plasma recess device; pseudomorphic HEMT; selective gate recess etching; small-signal RF characteristics; Argon; Electron mobility; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Plasma applications; Radio frequency;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768233
