Title :
Characteristics of InP nanoneedles grown on silicon by low-temperature MOCVD
Author :
Kun Li ; Fan Ren ; Chen, Ru Shan ; Thai Tran ; Kar Wei Ng ; Chang-Hasnain, Connie J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
Recombination dynamics of InP nanoneedles on silicon is studied using time-resolved photoluminescence. Long recombination lifetime ~13 ns and high IQE ~ 10% are obtained for as-grown nanoneedles. Optically pumped nanoneedle laser is demonstrated at room temperature.
Keywords :
III-V semiconductors; MOCVD; electron-hole recombination; indium compounds; nanofabrication; nanostructured materials; photoluminescence; radiative lifetimes; semiconductor growth; semiconductor lasers; time resolved spectra; InP; InP nanoneedle characteristics; Si; low-temperature MOCVD; optically pumped nanoneedle laser; recombination dynamics; recombination lifetime; temperature 293 K to 298 K; time-resolved photoluminescence; Indium phosphide; Laser excitation; Laser modes; Measurement by laser beam; Pump lasers; Silicon; Temperature measurement; Indium phosphide; nanostructured materials; optoelectronic devices; photoluminescence; semiconductor lasers; time measurement; ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403325
