DocumentCode
2842595
Title
A high-sensitivity active magnetic probe using CMOS integrated circuits technology
Author
Aoyama, Satoshi ; Kawahito, Shoji ; Yasui, Takeshi ; Yamaguchi, Masahiro
Author_Institution
Graduate Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu, Japan
fYear
2005
fDate
24-26 Oct. 2005
Firstpage
103
Lastpage
106
Abstract
A novel magnetic probe has been designed and fabricated in CMOS-SOI technology. Testing results show, for the first time, the effectiveness of the active magnetic probe with on-chip amplification, electric field suppression and electrical switching.
Keywords
CMOS integrated circuits; integrated circuit measurement; magnetic devices; preamplifiers; probes; silicon-on-insulator; CMOS integrated circuits technology; CMOS-SOI technology; active magnetic probe; electric field suppression; electrical switching; near field measurement; on-chip amplification; CMOS integrated circuits; CMOS technology; Coils; Electromagnetic compatibility; Electromagnetic fields; Electromagnetic measurements; Integrated circuit technology; Magnetic field measurement; Probes; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 2005. IEEE 14th Topical Meeting on
Print_ISBN
0-7803-9220-5
Type
conf
DOI
10.1109/EPEP.2005.1563712
Filename
1563712
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