Fundamental oscillation up to 1.31 THz in thin-well resonant tunneling diodes

Author

Kanaya, Haruichi ; Shibayama, H. ; Suzuki, Satoshi ; Asada, Minoru

Author_Institution

Interdiscipl. Grad. Sch. of Sci. & Technol., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

106

Lastpage

109

Abstract

Room-temperature fundamental oscillation of up to 1.31 THz was achieved in thin-well resonant tunneling diodes integrated with planar slot antennas. The output powers were ~10 μW at 1.31 THz and around 30 nW in the 0.8-1.1 THz region. This high frequency oscillation with relatively high output power is attributed to a reduction in the intrinsic delay and an increase in the widths of current density and voltage of the negative differential conductance region due to the thin well structure.

Keywords

current density; oscillations; planar antennas; quantum well devices; resonant tunnelling diodes; slot antennas; current density width; frequency 0.8 THz to 1.1 THz; frequency 1.31 THz; fundamental oscillation; high frequency oscillation; intrinsic delay; negative differential conductance region; output powers; planar slot antennas; temperature 293 K to 298 K; thin well structure; thin-well resonant tunneling diodes; voltage width; Delay; Oscillators; Power generation; Resonant tunneling devices; Semiconductor diodes; Slot antennas; oscillators; quantum well devices; resonant tunneling devices; slot antennas; submillimeter integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403331

Filename

6403331