Title :
40 Gbit/s identical layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm
Author :
Klein, H. ; Bornholdt, Carsten ; Przyrembel, G. ; Sigmund, A. ; Molzow, W. ; Moehrle, Martin
Author_Institution :
Fraunhofer Inst. for Telecommun., Berlin, Germany
Abstract :
We present electroabsorption modulated DFB Lasers using an identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; laser transitions; optical materials; quantum well lasers; InGaAlAs; bit rate 40 Gbit/s; dynamic extinction ratio; electroabsorption-modulated DFB lasers; multiple quantum wells; semicooling; wavelength 1298 nm to 1311 nm; Current measurement; Electrodes; Modulation; Optical waveguides; Quantum well devices; Temperature measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403333
