Title :
Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications
Author :
Dell´Olio, F. ; Ciminelli, C. ; Armenise, M.N. ; Soares, Francisco M. ; Rehbein, W.
Author_Institution :
Optoelectron. Lab., Politec. di Bari, Bari, Italy
Abstract :
Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 μm has a quality factor exceeding 7×105 and resonance depth close to 10 dB.
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical design techniques; optical fabrication; optical materials; photolithography; ring lasers; sputter etching; vapour phase epitaxial growth; waveguide lasers; InGaAsP-InP; gyro application; large-size high-Q ring resonator; metal-organic vapour-phase-epitaxy; optical cavities; optical design; optical fabrication; photonic integrated circuits; quality factor; radius 13 mm; reactive ion etching; resonance depth; semiconductor ring lasers; size 1.444 mum; standard photolithography; straight bus waveguide; Gyroscopes; Indium phosphide; Optical fibers; Optical ring resonators; Optical sensors; Gyroscopes; Integrated optoelectronics; Optoelectronic and photonic sensors; Optoelectronic devices;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403336
