A simulator for GaAs MESFET power performance

Author

Lingling, Sun ; Xiane, Chen

Author_Institution

Center of CAD, Hangzhou Inst. of Electron. Eng., China

fYear

1998

fDate

1998

Firstpage

126

Lastpage

129

Abstract

This paper introduces a simulator for GaAs FET power performance. Based on an algorithm of load-pull simulation for the GaAs FET, the simulator is capable of searching for the optimum load impedance, calculating output power performance, plotting power contours on the output impedance plane for a GaAs FET and designing a matching network. It can also be used in the design of microwave power amplifiers

Keywords

III-V semiconductors; digital simulation; electric impedance; electronic engineering computing; equivalent circuits; gallium arsenide; impedance matching; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power MESFET; semiconductor device models; GaAs; GaAs MESFET power performance; load-pull simulation; matching network design; optimum load impedance; output impedance plane; output power performance calculation; power amplifier design; power contours plotting; simulator; Algorithm design and analysis; Circuit simulation; Computer aided engineering; Equivalent circuits; FETs; Impedance measurement; Nonlinear circuits; Power amplifiers; Power generation; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768244

Filename

768244