DocumentCode
2842722
Title
Model of quasi-vertical planar anti-parallel Schottky diode
Author
Zhang, Jian ; Piironen, Petri V. ; Möttönen, Ville S. ; Louhi, Jyrki T. ; Lehto, Arto O. ; Simon, Ansgar ; Lin, Chih I. ; Raisanen, Antti V.
Author_Institution
Radio Lab., Helsinki Univ. of Technol., Espoo, Finland
fYear
1998
fDate
1998
Firstpage
130
Lastpage
133
Abstract
A model of Quasi-Vertical planar Anti-parallel Schottky Diode (QVPAPD) is developed by using electromagnetic (EM) analyses of the diode structure. The mounting structure of the diode is taken into account. The model is used in the design of a 220 GHz subharmonic mixer with the QVPAPD. A preliminary experimental result is given
Keywords
Schottky diode mixers; Schottky diodes; equivalent circuits; millimetre wave diodes; millimetre wave mixers; semiconductor device models; 10.5 dB; 220 GHz; 6.2 dB; EHF; EM analyses; MM-wave diode model; anti-parallel Schottky diode; diode structure analysis; electromagnetic analysis; mounting structure; planar Schottky diode; quasi-vertical Schottky diode; subharmonic mixer; Conducting materials; Electromagnetic analysis; Equivalent circuits; Finite element methods; Frequency; Microstrip; Passivation; Schottky diodes; Substrates; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4308-5
Type
conf
DOI
10.1109/ICMMT.1998.768245
Filename
768245
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