Electrical conduction property at InAs/Si(111) interface by selective-area MOVPE

Ohmic I-V characteristics at interface between n-type InAs and n-type Si have been obtained. Single-domain InAs islands (1μm in diameter and 0.5 μm in height) have been grown epitaxially on Si(111) by selective-area MOVPE. After annealing, linear I-V characteristic was observed with excellent reproducibility and the current through the electrode depends on the number of InAs islands beneath the surface contact metal. The resistivity of InAs was estimated to be 0.0662 Ω · cm. The value corresponds to a carrier concentration of approximately. 2 × 10¹⁶ cm^-3. This is reasonable as the intrinsic carrier concentration for an un-doped InAs layer.