Title :
Monte Carlo simulation of 94 GHz InP Gunn diodes
Author :
Dunn, G.M. ; Kearney, M.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Loughborough Univ., UK
Abstract :
We have investigated three types of InP Gunn diode using a Monte Carlo simulation method, and have attempted to optimize the performance of these devices under a 94 GHz driving potential. The maximum efficiency, natural frequencies and power output are all found to be very significantly affected by the operating temperature, device length and potential bias
Keywords :
Gunn diodes; III-V semiconductors; Monte Carlo methods; indium compounds; millimetre wave diodes; semiconductor device models; 94 GHz; InP; InP Gunn diodes; Monte Carlo simulation; device length; maximum efficiency; natural frequencies; operating temperature; performance optimisation; potential bias; power output; Diodes; Doping profiles; Electrons; Frequency; Gallium arsenide; Gunn devices; Indium phosphide; Monte Carlo methods; Semiconductor process modeling; Temperature;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768246
