Title :
AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRS) prepared by MOCVD
Author :
Liu, Wen-Chau ; Cheng, Shiou-Ying ; Chang, Wen-Lung ; Pan, Hsi-jen ; Shie, Yung-Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRS) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are,obtained for the studied SNDRS device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; minority carriers; negative resistance devices; resonant tunnelling; semiconductor superlattices; semiconductor switches; vapour phase epitaxial growth; 5-period superlattice; AlInAs-GaInAs; MOCVD preparation; N-shaped multiple NDR phenomenon; confinement barrier; forward active mode; minority carriers; negative-differential-resistance switch; resonant tunneling; room temperature; saturation mode; superlatticed NDR switch; three-terminal-controlled NDR; transistor action; Carrier confinement; Character generation; Frequency conversion; MOCVD; Power semiconductor switches; Resonant tunneling devices; Superlattices; Switching circuits; Switching converters; Temperature measurement;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768247
