Title :
T gates and selective etching techniques applied to millimeter wave-band PHEMT process
Author :
Qiang, Jia Hai ; Dong, Xing ; Bai, LiXiao ; Kui, Song Jun
Author_Institution :
The 13th Inst., Minist. of EI, China
Abstract :
We have fabricated a PHEMT with 0.1-0.3 μm T-gates by a new method. With parameter control, such as time, etc., and transverse growth on the gate length, we have obtained 0.1-0.3 μm T-gates. The fabricated device has an average transconductances across a wafer in excess of 400 mS/mm, and its Gamax reaches 5.67 dB at 40 GHz, with fT=74 GHz and fmax=130 GHz. Here we also introduce a powerful method of selective etching using a citric acid/H2O2 etching system. With this system we have obtained a high selective etching ratio: the ratio for GaAs-Al0.03Ga0.7 As is over 150
Keywords :
etching; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device metallisation; semiconductor technology; 0.1 to 0.3 micron; 40 to 130 GHz; 400 mS/mm; 5.67 dB; GaAs-Al0.03Ga0.7As; H2O2; MM-wave band PHEMT process; T-gates; citric acid/H2O2 etching system; high selective etching ratio; pseudomorphic HEMT fabrication; selective etching techniques; transconductances; Art; Conducting materials; Gallium arsenide; Gas discharge devices; HEMTs; Indium phosphide; Millimeter wave technology; PHEMTs; Silicon compounds; Wet etching;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768249
