All-optical wavelength conversion at 40Gb/s with enhanced XPM by facet reflection using intersubband transition in InGaAs/AlAsSb quantum well waveguide

Author

Akimoto, Ryoichi ; Cong, Guangwei ; Gozu, Shin-ichiro ; Mozume, Teruo ; Ishikawa, Hiroshi

Author_Institution

Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2010

fDate

19-23 Sept. 2010

Firstpage

1

Lastpage

3

Abstract

XPM efficiency associated with intersubband transition in InGaAs/AlAsSb quantum well waveguide is enhanced by use of facet reflection. The probe experiences the pump-induced index change twice, thereby increasing the XPM efficiency two times. XPM-based wavelength conversion at 40Gb/s is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; light reflection; optical modulation; optical waveguides; optical wavelength conversion; phase modulation; semiconductor quantum wells; InGaAs-AlAsSb; all-optical wavelength conversion; bit rate 40 Gbit/s; cross-phase modulation; enhanced XPM; facet reflection; intersubband transition; pump-induced index; quantum well waveguide; Absorption; Amplitude modulation; Optical waveguides; Optical wavelength conversion; Probes; Reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication (ECOC), 2010 36th European Conference and Exhibition on

Conference_Location

Torino

Print_ISBN

978-1-4244-8536-9

Electronic_ISBN

978-1-4244-8534-5

Type

conf

DOI

10.1109/ECOC.2010.5621128

Filename

5621128