High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI

Author

Beling, Andreas ; Piels, Molly ; Cross, A.S. ; Fu, Yi-Shiang ; Zhou, Qu ; Peters, Jochen ; Bowers, John E. ; Campbell, Joe C.

Author_Institution

ECE Dept., Univ. of Virginia, Charlottesville, VA, USA

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

171

Lastpage

172

Abstract

For the first time we demonstrate evanescently-coupled modified uni-traveling carrier photodiodes (MUTC PDs) on silicon-on-insulator (SOI) waveguide with an internal responsivity of 0.85 A/W, up to 15 GHz bandwidth, and high RF output power. A novel 2-element MUTC PD array has a saturation current-bandwidth-product of >;630 mA*GHz and achieves +9 dBm RF output power at 20 GHz.

Keywords

III-V semiconductors; elemental semiconductors; indium compounds; photodiodes; silicon; silicon-on-insulator; 2-element modified unitraveling carrier photodiode array; InP; RF output power; Si; evanescently-coupled modified unitraveling carrier photodiodes; frequency 15 GHz; frequency 20 GHz; high-power InP-based waveguide photodiodes; internal responsivity; photodiode arrays; saturation current-bandwidth-product; silicon-on-insulator waveguide; Bandwidth; Current measurement; Optical waveguides; Photodiodes; Power generation; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403349

Filename

6403349