Title :
High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI
Author :
Beling, Andreas ; Piels, Molly ; Cross, A.S. ; Fu, Yi-Shiang ; Zhou, Qu ; Peters, Jochen ; Bowers, John E. ; Campbell, Joe C.
Author_Institution :
ECE Dept., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
For the first time we demonstrate evanescently-coupled modified uni-traveling carrier photodiodes (MUTC PDs) on silicon-on-insulator (SOI) waveguide with an internal responsivity of 0.85 A/W, up to 15 GHz bandwidth, and high RF output power. A novel 2-element MUTC PD array has a saturation current-bandwidth-product of >;630 mA*GHz and achieves +9 dBm RF output power at 20 GHz.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; photodiodes; silicon; silicon-on-insulator; 2-element modified unitraveling carrier photodiode array; InP; RF output power; Si; evanescently-coupled modified unitraveling carrier photodiodes; frequency 15 GHz; frequency 20 GHz; high-power InP-based waveguide photodiodes; internal responsivity; photodiode arrays; saturation current-bandwidth-product; silicon-on-insulator waveguide; Bandwidth; Current measurement; Optical waveguides; Photodiodes; Power generation; Radio frequency; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403349
