Title :
InAs/InP quantum dash based mode locked lasers for 60 GHz radio over fiber applications
Author :
Rosales, R. ; Charbonnier, B. ; Merghem, K. ; van Dijk, Frederic ; Lelarge, F. ; Martinez, A. ; Ramdane, A.
Author_Institution :
Lab. for Photonics & Nanostruct., Marcoussis, France
Abstract :
Material growth optimization of InAs/InP quantum dashes has allowed the achievement of single section mode-locked lasers with improved performance in terms of modal gain >; 40 cm-1, average output power >; 40 mW, radio frequency linewidth as narrow as 10 kHz together with a direct modulation bandwidth over 7 GHz. These devices were subsequently investigated as potential optical transmitters for mm-wave generation, namely 60 GHz radio-over-fiber applications. Relatively low error vector magnitude errors of ~ 11 % as well as high extinction ratio >; 25 dB shows the potential of these devices for >; 2.5 Gb/s short distance indoor communications.
Keywords :
III-V semiconductors; indium compounds; indoor radio; laser mode locking; microwave photonics; millimetre wave generation; optical fibre networks; optical modulation; optical transmitters; quantum dash lasers; radio-over-fibre; InAs-InP; direct modulation bandwidth; extinction ratio; frequency 10 kHz; frequency 60 GHz; material growth optimization; mm-wave generation; modal gain; optical transmitters; output power; quantum dash based mode locked lasers; radio frequency linewidth; radio over fiber applications; relatively low error vector magnitude errors; short distance indoor communications; single section mode-locked lasers; Laser mode locking; Laser noise; Modulation; Optical transmitters; Quantum dots; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403353
