InP/GaInAs DHBT with TiW emitter demonstrating fT/fmax ∼340/400GHz for 100 Gb/s circuit applications

Author

Nodjiadjim, V. ; Cros-Chahrour, S. ; Dupuy, Jean-Yves ; Riet, M. ; Berdaguer, P. ; Gentner, J.-L. ; Saturnin, B. ; Godin, J.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

192

Lastpage

195

Abstract

In this work we report the performances of an InP/GaInAs DHBT developed in III-V Lab with a TiW metal emitter. 0.5 μm effective emitter size HBTs demonstrate f_T and f_max above 320 and 430 GHz respectively. Very high yield 0.7 μm emitter width HBTs showing f_T/f_max ~ 340/400 GHz have been used to fabricate a trans-impedance amplifier with single-ended input and differential output for 100-Gb/s optical communications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; operational amplifiers; submillimetre wave amplifiers; HBT; III-V Lab; TiW metal emitter; bit rate 100 Gbit/s; frequency 340 GHz; frequency 400 GHz; optical communications; single-ended input; size 0.5 mum; size 0.7 mum; transimpedance amplifier; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Metals; Thermal resistance; Heterojunction bipolar transistor; InP; TiW; trans-impedance amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403355

Filename

6403355