DocumentCode :
2842949
Title :
InP/GaInAs DHBT with TiW emitter demonstrating fT/fmax ∼340/400GHz for 100 Gb/s circuit applications
Author :
Nodjiadjim, V. ; Cros-Chahrour, S. ; Dupuy, Jean-Yves ; Riet, M. ; Berdaguer, P. ; Gentner, J.-L. ; Saturnin, B. ; Godin, J.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear :
2012
fDate :
27-30 Aug. 2012
Firstpage :
192
Lastpage :
195
Abstract :
In this work we report the performances of an InP/GaInAs DHBT developed in III-V Lab with a TiW metal emitter. 0.5 μm effective emitter size HBTs demonstrate fT and fmax above 320 and 430 GHz respectively. Very high yield 0.7 μm emitter width HBTs showing fT/fmax ~ 340/400 GHz have been used to fabricate a trans-impedance amplifier with single-ended input and differential output for 100-Gb/s optical communications.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; operational amplifiers; submillimetre wave amplifiers; HBT; III-V Lab; TiW metal emitter; bit rate 100 Gbit/s; frequency 340 GHz; frequency 400 GHz; optical communications; single-ended input; size 0.5 mum; size 0.7 mum; transimpedance amplifier; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Metals; Thermal resistance; Heterojunction bipolar transistor; InP; TiW; trans-impedance amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403355
Filename :
6403355
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2842949
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